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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC6011/A DESCRIPTION *Collector-Emitter Breakdown Voltage: V(BR)CEO= 200V(Min)-2SC6011 = 200V(Min)-2SC6011A *Good Linearity of hFE *Complement to Type 2SA2151/A APPLICATIONS *Designed for audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER 2SC6011 VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage w w 2SC6011A 2SC6011 scs .i w VALUE UNIT 200 V 230 200 V 230 6 V 15 A 4 A .cn mi e 2SC6011A VEBO Emitter-Base Voltage IC Collector Current-Continuous IB B Base Current-Continuous Collector Power Dissipation @ TC=25 Junction Temperature PC 160 W TJ 150 Tstg Storage Temperature Range -55~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC6011/A TYP. MAX UNIT 2SC6011 V(BR)CEO Collector-Emitter Breakdown Voltage 2SC6011A IC= 50mA ; IB= 0 200 V 230 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A B 0.5 V 2SC6011 ICBO Collector Cutoff Current 2SC6011A VCB= 200V ; IE= 0 10 VCB= 230V ; IE= 0 A IEBO Emitter Cutoff Current VEB= 6V; IC= 0 hFE DC Current Gain COB Output Capacitance fT Current-Gain--Bandwidth Product hFE Classifications O 50-100 P 70-140 w w Y 90-180 scs .i w IC= 3A ; VCE= 4V IE= 0 ; VCB= 10V; ftest= 1.0MHz IE= -0.5A ; VCE= 12V .cn mi e 50 10 A 180 270 pF 20 MHz isc Websitewww.iscsemi.cn 2 |
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